Regensburg 2010 – scientific programme

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DS: Fachverband Dünne Schichten

DS 9: Poster: Synthesis of Nanostructured Films by Self-organization, Thermoelectric Thin Films and Nanostructures, High-k and Low-k Dielectrics, Layer Deposition Processes, Layer Growth, Layer Properties, Application of Thin Films, Surface Modification, Hard and Superhard Coatings, Metal Layers

DS 9.7: Poster

Monday, March 22, 2010, 15:00–17:30, Poster D1

Condensation of silicon monoxide on Si(111) studied by infrared spectroscopy for different substrate temperatures — Steffen Wetzel, •Markus Klevenz, and Annemarie Pucci — Kirchhoff-Institut für Physik der Universität Heidelberg, INF 227, 69120 Heidelberg

The growth of thermally evaporated silicon monoxide (SiO) on a Si(111) surface was studied in situ by infrared spectroscopy under ultra-high vacuum conditions. Within the first stage of film growth a large shift of the main vibrational band from 864 cm⁻¹ to the bulk value of 984 cm⁻¹ was observed (at 300K). This effect can be assigned to different Si-O bond lengths of Si-O-Si bridges nearby the Si surface in comparison to the bulk material and was successfully modelled with an SiO_x (0<x<1) interlayer. Measurements at various substrate temperatures also reveal a clear shift of the vibrational peak position; below 300 K to lower wave numbers with decreasing substrate temperature and above 300 K to higher wavenumbers with increasing substrate temperature, respectively. For higher temperatures disproportioning of SiO into Si and SiO₂ becomes important whereas for the very low temperatures only the bonding geometry should be important. Both effects will be discussed in detail.