Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 10: Devices II

HL 10.5: Talk

Monday, March 22, 2010, 15:00–15:15, H13

Application of a parameter extraction method for MOSFETs — •Josef Biba, Dorota Kułaga-Egger, Torsten Sulima, and Walter Hansch — Universität der Bundeswehr München, Institut für Physik, Werner-Heisenberg-Weg 39, 85577 Neubiberg

For statistical process control in industrial production of semiconductors it is important to obtain MOSFET parameters, which are not directly accessible. An effective but merely known method to determine the effective channel length and the channel resistance is the one of Kazuo Terada and Hiroki Muta. Here the output characteristics of transistors with same channel width but various channel lengths are used. This approach showed good results in simulations and with processed self-aligned poly-silicon-gate MOSFETs.

We present an investigation of the application of this method on metal-gate transistors, where the gate stack is aligned by lithography. This results in an asymmetric underdiffusion of the gate. For the investigation n-channel MOSFETs were produced using Spin-On-Dopant (SOD) technology for Source/Drain doping. The effective channel length and the channel resistance were determined using Terada Muta and compared to SIMS and contact resistant measurements.