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HL: Fachverband Halbleiterphysik
HL 10: Devices II
HL 10.6: Vortrag
Montag, 22. März 2010, 15:15–15:30, H13
Electrical characterization of doped semiconductor nanostructures with Scanning Microwave Microscopy — •Matthias A. Fenner1, Hassan Tanbakuchi1, Stephan Streit2, Christine Baumgart2, Manfred Helm2, and Heidemarie Schmidt2 — 1Agilent Technologies, Campus Kronberg, 61476 Kronberg, Germany — 2Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf e.V., P.O. Box 510119, 01314 Dresden, Germany
Highly sensitive scanning microwave microscopy (SMM) with a capacitance resolution in the aF range [1] has been used to investigate the electrical properties of doped semiconductor nanostructures in the microwave frequency range from 1.5 GHz to 6 GHz at different dc offset biases. The microwave signal S11 reflected by the sample is related to the impedance of the sample. Superimposing an ac voltage in the kHz range one also gains information about the derivative of the S11 signal (dC/dV), which is dependent on the doping density in the semiconductor, circuit resistance, and reactance. We investigated a static random access memory (SRAM) cell and one cross-sectionally prepared Si epilayer structured sample [2]. The derivative of S11 strongly depends on the dc offset bias. The Si epilayer sample reveals the strongest dependence on fac and also on the biasing history during the SMM measurements.
[1] F. Michael Serry, Agilent Application Note 5989-8818EN, http:// cp.literature.agilent.com/litweb/pdf/5989-8818EN.pdf, 2008.
[2] C. Baumgart, M. Helm, H. Schmidt, Phys. Rev. B 80, 085305 (2009).