Regensburg 2010 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 11: Transport
HL 11.14: Vortrag
Montag, 22. März 2010, 17:30–17:45, H14
Interaction between quantum dots and a two-dimensional system — •Florian Lau1, Gerold Kiesslich1, Andreas Marent2, Tobias Nowozin2, Tobias Brandes1, and Dieter Bimberg2 — 1Institut für Theoretische Physik, TU Berlin, Hardenbergstr. 36, 10623 Berlin — 2Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623 Berlin
Novel types of memories will combine the advantage of non-volatility of the Flash-memory and the performance and endurance of the DRAM. One of the most promising options for charge-based memories is the use on self-organized quantum dots (QDs) as memory units. Recently, a QD-based memory concept was introduced with the potential to fulfill all requirements concerning storage/access time, endurance and scalability [1].
We investigated the read-out in such a QD-based memory by studying the
coupling between InAs/GaAs QDs and an adjacent two-dimensional hole
gas (2DHG). Self-consistent solutions of Poisson- and drift-diffusion
equations yield the dependence of the charge carrier concentration on a
variety of parameters such as the number of charge carriers stored in
the QDs or the distance between the QDs and the 2DHG. Furthermore, the
effect of charged QDs on the mobility of the 2DHG is discussed in
terms of a memory-function approach.
The simulation results are compared with measurements performed on a memory structure based on InAs/GaAs QDs.
M.Geller, A. Marent, T. Nowozin, D. Bimberg, N. Akcay, and
N. Öncan, Appl. Phys. Lett. 92, 092108 (2008).