Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 11: Transport
HL 11.3: Vortrag
Montag, 22. März 2010, 14:30–14:45, H14
The influence of doping on the electronic transport properties of InAs nanowires — •Stephan Wirths1,2, Karl Weis1,2, Christian Volk1,2, Shima Alagha1,2, Masashi Akabori1,2, Kamil Sladek1,2, Stefan Trellenkamp1,2, Hans Lüth1,2, Thomas Schäpers1,2, Hilde Hardtdegen1,2, and Detlev Grützmacher1,2 — 1Institut für Bio- und Nanosysteme (IBN-1), Forschungszentrum Jülich, 52425 Jülich, Germany — 2JARA, Fundamentals of Future Information Technology
The investigation of the electrical conductivity of semiconductor nanowires is a crucial step on the road to zero-dimensional electronic systems. Especially the effect of Si-doping on the resistivity plays an important role and has not been investigated, yet.
We study the electronic transport properties of n-doped InAs:Si nanowires grown by metal organic vapor phase epitaxy. Nominally undoped wires and Si-doped wires with four different dopant concentrations are examined. Two- and four-terminal transport measurements are performed both at room temperature and at low temperatures down to 4 K. In addition, by using a SiO2 back gate, we yield field effect transistor characteristics. Hence, the depending of conductivity on the gate voltage is determined. Moreover, we investigate the temperature dependency of transport properties.
For the lowest dopant concentration we quantify ρ=(3.8 ± 0.8)× 10−4 Ωm and ρ=(1.8 ± 0.4)× 10−5 Ωm for the highest dopant concentration. The values of ρ were averaged over approximately 10 to 30 wires. We can conclude, that Si-doping decreases the resistivity.