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HL: Fachverband Halbleiterphysik

HL 11: Transport

HL 11.4: Vortrag

Montag, 22. März 2010, 14:45–15:00, H14

Universal and reconfigurable logic gates in a compact three-terminal resonant tunneling diode — •Fabian Hartmann, Lukas Worschech, Tae Yang Kim, and Alfred Forchel — Universität Würzburg, Physikalisches Institut, Lehrstuhl für Technische Physik, Am Hubland, 97074 Würzburg

Submicron-sized mesas of resonant tunneling diodes (RTDs) with split drain contacts have been realized and the current-voltage characteristics have been studied in the bistable regime at room temperature. Dynamically biased, the RTDs show noise-triggered firing of spike-like signals and can act as reconfigurable universal logic gates for small voltage changes of a few mV at the input branches. These observations are interpreted in terms of a stochastic nonlinear processes. The logic gate operation shows gain for the fired-signal bursts with transconductance slopes exceeding the thermal limit. The RTD junction can be easily integrated to arrays of multiple inputs and have thus the potential to mimic neurons in nanoelectronic circuits.