Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 11: Transport

HL 11.6: Talk

Monday, March 22, 2010, 15:15–15:30, H14

Electromigration in Ag-Nanowires with a Single Grain Boundary — •Simon Sindermann, Christian Witt, Michael Horn-von Hoegen, Günther Dumpich, and Frank-J. Meyer zu Heringdorf — Faculty of Physics and Center for Nanointegration Duisburg-Essen (CeNIDE) University Duisburg-Essen

Electromigration is the dominating cause of interconnect failure. For the electromigration transport of material, it is known that grain boundaries play a significant role as an important diffusion path in addition to surface diffusion. In former experiments, we avoided grain boundaries and examined electromigration effects in single-crystalline Ag nanowires. Here, we present a new approach of controlled fabrication of nanowires with isolated grain boundaries. On Si(111), Ag islands are known to form areas of different crystallographic orientations, Ag(111) and Ag(001), which can be distinguished by Photoemission Electron Microscopy (PEEM). Using a focused ion beam (FIB) we erode Ag from the islands such that a wire-like area in the vicinity of the grain boundary remains. After contacting the wires by ion beam induced Pt deposition, we study the electromigration in-situ by scanning electron microscopy, combined with a four wire resistance measurement.