HL 12: Group-III-Nitrides: Optical Properties I
Monday, March 22, 2010, 14:00–15:30, H15
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14:00 |
HL 12.1 |
Cathodoluminescence hyper-spectral imaging of InGaN/GaN quantum wells — •Jochen Bruckbauer, Paul R. Edwards, Tao Wang, and Robert W. Martin
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14:15 |
HL 12.2 |
Spinodal and binodal decomposition of a thin InGaN layer grown on GaN — •Christian Tessarek, Timo Aschenbrenner, Stephan Figge, and Detlef Hommel
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14:30 |
HL 12.3 |
Kathodolumineszenz-Untersuchungen an dicken rissfreien GaN-Schichten auf Si(111)-Substraten — •Anja Dempewolf, Frank Bertram, Thomas Hempel und Jürgen Christen
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14:45 |
HL 12.4 |
Impact of the AlN seeding layer thickness on GaN orientation on high index Si-substrates — •Roghaiyeh Ravash, Jürgen Bläsing, Peter Veit, Thomas Hempel, Armin Dadgar, Jürgen Christen, and Alois Krost
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15:00 |
HL 12.5 |
Ein Indium Defekt Komplexes und die Lumineszenzeigenschaften von GaInN und AlInN — •Patrick Keßler, Katharina Lorenz, Jens Niederhausen, Bettina Steitz, Joao G. Correia, Karl Johnston, Reiner Vainden und ISOLDE Collaboration
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15:15 |
HL 12.6 |
Cathodoluminescence microscopy analysis of structural and optical properties of HVPE ELO-AlN layers — •Martin von Kurnatowski, Barbara Bastek, Juergen Christen, Thomas Hempel, Frank Bertram, Hideto Miyake, Yusuke Katagiri, Kazuki Okuura, and Kazumasa Hiramatsu
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