Regensburg 2010 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 13: Quantum Dots and Wires: Preparation and Characterization I
HL 13.14: Talk
Monday, March 22, 2010, 17:30–17:45, H17
Scaled nanowire field effect transistors and dopant free logic — •Andre Heinzig1, Walter M. Weber1, Daniel Grimm2, Thorsten Roessler3, Monika Emmerling4, Martin Kamp4, and Thomas Mikolajick1 — 1Namlab gGmbH, D-01187 Dresden — 2IFW-Dresden — 3IHM, TU-Dresden — 4Universität Würzburg
Most digital electronic applications are based on complementary logic where symmetric pairs of p- and n-type transistors are combined to significantly reduce the power consumption. As downscaling proceeds the accurate and reproducible adjustment of doping profiles has proven to be a difficult task. Intrinsic silicon nanowire (NW) FETs were fabricated with intruded, abrupt Schottky junctions. The carrier injection over the metal (NiSi2) to Si NW-hetero-junctions can be controlled accurately by locally adjusting the electric field. Successful gate control and saturation of the devices has been achieved for gate lengths down to 32 nm for a NW diameter of 17 nm. The integration of high-k dielectrics (HfO2, Al2O3) was implemented to improve the gate coupling. A novel approach with a double top gate architecture was used to independently control the carrier injection through each junction. By blocking the undesired type of carriers at one junction, the intrinsic ambipolar behavior of the NW-FET can be tuned to p- or n-type without the use of doping. The first dopant free complementary inverter has been fabricated by combining two NW-FETs with inverse programmed polarity. The transfer characteristics show a clear inversion behavior with stable states over several periods. These results imply that all types of digital functions can be realized with undoped Si-NWs.