Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 13: Quantum Dots and Wires: Preparation and Characterization I

HL 13.1: Talk

Monday, March 22, 2010, 14:00–14:15, H17

In-assisted growth of InAs nanowires by molecular beam epitaxy — •Thomas Grap, Christian Blömers, Mihail Ion Lepsa, Steffi Lenk, Thomas Schäpers, Hans Lüth, and Detlev Grützmacher — Institute of Bio- and Nanosystems (IBN-1) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, D-52425 Jülich

Semiconductor nanowires are expected to play a key role in future nanotechnology as well as for understanding the optical, electrical and spin-related properties in systems with reduced dimensionality and size. In particular, InAs nanowires are of special interest in connection with the material properties: low effective mass, narrow gap, high electron mobility and strong electron accumulation layer on its surface. As a better alternative to the growth of InAs nanowires using Au particles, we have successfully developed a method using In droplets as seeds. The nanowires have been grown on both GaAs and InP (111)B substrates covered with a very thin hydrogen silsesquioxan (HSQ) film. We show systematic results obtained for different growth conditions related to substrate temperature and beam fluxes of In and As. Information about the crystallographic structure of the nanowires got from transmission electron microscopy investigations is also presented.