Regensburg 2010 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 13: Quantum Dots and Wires: Preparation and Characterization I
HL 13.2: Talk
Monday, March 22, 2010, 14:15–14:30, H17
Enhancement of Young's modulus in InAs nanowires — •Vadim Migunov1, Zi-An Li1, Marina Spasova1, Michael Farle1, Andrey Lysov2, Werner Prost2, Ingo Regolin2, and Franz-Josef Tegude2 — 1Fakultät für Physik and CeNIDE — 2Fakultät für Ingenieurwissenschaften and CeNIDE, Universität Duisburg-Essen, Duisburg, Deutschland
Semiconducting nanowires are of great interest due to their potential in electrical and electromechanical applications. In our study Young's modulus of InAs nanowires (NWs) with a diameter of approximately 50 nm was determined by electromechanical resonance measurements.
The NWs were grown by MOCVD on the (100) InAs substrate. Three types of NWs with different crystalline structures were identified by HR-TEM: Zinc-Blende (ZB) structure, Wurtzite (WZ) structure, mixed WZ and ZB structure. The electromechanical resonance was studied in-situ in TEM to correlate mechanical and structural properties of the NWs. The resonance frequency was determined by tuning the AC voltage frequency applied between STM tip and NW until the maximum amplitude of mechanical vibrations of the NW was achieved and directly observed in TEM. The measurements were performed on NWs with different lengths, diameters and structures. Young's modulus for two types of structures (pure WZ and mixed structure) was calculated using TEM tomography data for the NWs cross-section. An enhancement of about a factor of two of Young's modulus in comparison to the bulk value was observed for both NWs types.
The work is supported by SFB 445.