Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 13: Quantum Dots and Wires: Preparation and Characterization I

HL 13.7: Vortrag

Montag, 22. März 2010, 15:30–15:45, H17

High quality single-photon photoluminescence emission of MOVPE grown InGaAs quantum dots — •Daniel Richter, Robert Hafenbrak, Klaus Jöns, Wolfgang-Michael Schulz, Marcus Eichfelder, Robert Roßbach, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

In recent years, investigations on semiconductor quantum dots (QDs) have been motivated by their potential application in the field of quantum information processing. Therefore, optically or electrically addressable single quantum dots are needed on a mass production scale using metal-organic vapor-phase epitaxy (MOVPE). A narrow linewidth of QD emission makes them suitable for e.g. two photon interference and single-photon emitters at high repetition rates. By applying special annealing techniques the growth of low density (10⁷ cm⁻²), small sized quantum dots grown on misoriented GaAs substrates by MOVPE was realized. The influence of the growth conditions on the QD structural properties was investigated by atomic force microscopy measurements. To enhance the photoluminescence extraction efficiency a DBR structure is used. With a high resolution PL setup, using a Fabry-Perrot Etalon, QD PL emission linewidths of 12 µeV were found. Furthermore the fine structure splitting is investigated. We prove the zero-dimensionality of the QD structures by performing 2nd order intensity autocorrelation measurements.