Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 13: Quantum Dots and Wires: Preparation and Characterization I
HL 13.9: Vortrag
Montag, 22. März 2010, 16:15–16:30, H17
GaAs/GaMnAs core-shell nanowires grown by MBE — •Andreas Rudolph1, Marcello Soda1, Matthias Kiessling1, Dieter Schuh1, Christian Back1, Josef Zweck1, Tomasz Wojtowicz2, Werner Wegscheider3, and Elisabeth Reiger1 — 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Universitätsstrasse 31, D-93053 Regensburg, Germany — 2Institute of Physics, PAS, Al. Lotnikow 32/46, 02-668 Warsaw, Poland — 3Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland
Our research interest is focused on combining the diluted magnetic semiconductor GaMnAs with the growth of GaAs nanowires. We use a core shell nanowire approach were the core GaAs nanowire is grown at typical nanowire growth conditions using Au or Ga as catalysts [1,2]. The GaMnAs shell is deposited at low temperatures, known to be crucial for high quality GaMnAs. The nanowires are characterized by SEM, TEM, SQUID and transport measurements. Parameters like growth temperature, shell thickness and Mn content were varied to investigate their influence on Curie temperature and magnetic anisotropy [3]. Currently we work on improving the core nanowire growth to obtain more uniform nanowire samples with respect to size, shape and in particular side facets. With this samples the GaMnAs shell could be optimized on the specific crystal orientation of the side facets.
[1] M. Tchernycheva et al., Nanotechnology 17, (2006). [2] C. Colombo et al., PRB 77, (2008) [3] A. Rudolph et al., Nano Letters, (unpublished)