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14:00 |
HL 13.1 |
In-assisted growth of InAs nanowires by molecular beam epitaxy — •Thomas Grap, Christian Blömers, Mihail Ion Lepsa, Steffi Lenk, Thomas Schäpers, Hans Lüth, and Detlev Grützmacher
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14:15 |
HL 13.2 |
Enhancement of Young's modulus in InAs nanowires — •Vadim Migunov, Zi-An Li, Marina Spasova, Michael Farle, Andrey Lysov, Werner Prost, Ingo Regolin, and Franz-Josef Tegude
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14:30 |
HL 13.3 |
Improvement of the optical quality of site-controlled InAs quantum dots by a double stack growth technique in wet-chemically etched holes — •Tino Johannes Pfau, Aleksander Gushterov, Johann-Peter Reithmaier, Isabelle Cestier, Gadi Eisenstein, Evgany Linder, and David Gershoni
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14:45 |
HL 13.4 |
Influence of arsenic species on InAs island formation on InAlGaAs/InP (100 ) surfaces — •Christian Gilfert, Emil-Mihai Pavelescu, and Johann Peter Reithmaier
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15:00 |
HL 13.5 |
Herstellung und Charakterisierung von InAs/GaAs-Quantenpunktstrukturen mittels Droplet-Epitaxie — •Verena Zürbig, Aleksandar Gushterov und Johann Peter Reithmaier
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15:15 |
HL 13.6 |
Site Controlled InAs Quantum Dots with ultra low densities and improved spectral uniformity — •Carmen Drescher, Christian Schneider, Kousha Talebian, Martin Kamp, Sven Höfling, Stefan Reitzenstein, Lukas Worschech, and Alfred Forchel
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15:30 |
HL 13.7 |
High quality single-photon photoluminescence emission of MOVPE grown InGaAs quantum dots — •Daniel Richter, Robert Hafenbrak, Klaus Jöns, Wolfgang-Michael Schulz, Marcus Eichfelder, Robert Roßbach, Michael Jetter, and Peter Michler
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15:45 |
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15 Min. Coffee Break
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16:00 |
HL 13.8 |
Structural and optical characterization of high areal density GaxIn1−xP quantum dots on GaP — •Vasilij Baumann, Sven Gerhard, Sven Höfling, and Alfred Forchel
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16:15 |
HL 13.9 |
GaAs/GaMnAs core-shell nanowires grown by MBE — •Andreas Rudolph, Marcello Soda, Matthias Kiessling, Dieter Schuh, Christian Back, Josef Zweck, Tomasz Wojtowicz, Werner Wegscheider, and Elisabeth Reiger
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16:30 |
HL 13.10 |
Single photon emission from positioned GaAs/AlGaAs axial heterostructure nanowires grown on pre-patterned substrate — •Jan Heinrich, Alexander Huggenberger, Tobias Heindel, Stephan Reitzenstein, Sven Höfling, Lukas Worschech, and Alfred Forchel
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16:45 |
HL 13.11 |
Position control of self-catalyzed MBE-grown GaAs nanowires — •Benedikt Bauer, Andreas Rudolph, Anna Fontcuberta i Morral, Dieter Weiß, Dieter Schuh, Marcello Soda, Josef Zweck, and Elisabeth Reiger
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17:00 |
HL 13.12 |
Conversion of rare earth doped ZnS to ZnO nanowires — •Sebastian Geburt, Gabriele Bulgarini, Christian Borschel, and Carsten Ronning
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17:15 |
HL 13.13 |
Epitaxial silicon nanowire growth catalyzed by gold dot arrays from electron beam lithography patterning using silane precursors — •Björn Hoffmann, Gerald Brönstrup, Uwe Hübner, and Silke Christiansen
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17:30 |
HL 13.14 |
Scaled nanowire field effect transistors and dopant free logic — •Andre Heinzig, Walter M. Weber, Daniel Grimm, Thorsten Roessler, Monika Emmerling, Martin Kamp, and Thomas Mikolajick
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