Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 18: Focussed Session: Strong Light Matter Coupling I
HL 18.8: Vortrag
Dienstag, 23. März 2010, 12:15–12:30, H13
Influence of growth imperfections on optical properties of nitride pillar VCSEL microcavities — •Matthias Florian1, Frank Jahnke1, Angelika Pretorius2, Andreas Rosenauer2, Heiko Dartsch2, Carsten Kruse2, and Detlef Hommel2 — 1Institute for Theoretical Physics, University of Bremen, Germany — 2Institute for Solid State Physics, University of Bremen, Germany
The combination of distributed Bragg mirrors and pillar fabrication leads to photonic devices with efficient three-dimensional photon confinement for applications as low-threshold lasers and single-photon sources1. However, the quality of the optical mode confinement is reduced by fabrication imperfections of the underlying structure. For a Al(Ga)N/GaN micropillar system high resolution TEM investigations reveal layer-thickness gradients and fluctuations. The experimentally determined true layer profile as well as dispersion measurements for the low and high-index material are used as input for numerical calculations of the three-dimensional mode structure based on a vectorial transfer matrix approach2. We determine the influence of various types of structural imperfections on the reduction of the mode confinement in terms of the cavity quality factor. Furthermore, theoretical and experimental mode spectra are compared, that exhibit various confined transverse modes.
[1] H. Lohmeyer et al., Eur. Phys. J. B 48, 291–294 (2005)
[2] D. Burak and R. Binder, IEEE JQE 33, 1205–1215 (1997)