Regensburg 2010 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 19: Spin-controlled Transport I

HL 19.10: Vortrag

Dienstag, 23. März 2010, 12:00–12:15, H14

The spin-dependent recombination between phosphorus donors in silicon and Si/SiO₂ interface states — •Felix Hoehne¹, Hans Huebl², Bastian Galler¹, Christian Huck¹, Christoph Pellinger¹, Martin Stutzmann¹, and Martin Brandt¹ — ¹Walter Schottky Institut, München — ²Walther-Meissner-Institut, München

Electrically detected magnetic resonance (EDMR) is a well known tool to detect small numbers of spins. In this approach to spin resonance, the spin state is transferred to a charge state via a spin-dependent process governed by the Pauli principle involving two paramagnetic states. So far, the identification of such correlated states has only been achieved indirectly in EDMR. Here, we investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Via a multi-frequency pump-probe experiment in pulsed electrically detected magnetic resonance, we demonstrate that the dominant spin-dependent recombination transition occurs between phosphorus donors and Si/SiO₂ interface states. Combining pulses at different microwave frequencies allows us to selectively address the two spin subsystems participating in the recombination process and to coherently manipulate and detect the relative spin orientation of the two recombination partners.

Financial support by SFB 631 is gratefully acknowledged.