Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 19: Spin-controlled Transport I
HL 19.11: Talk
Tuesday, March 23, 2010, 12:15–12:30, H14
Anisotropic electron spin relaxation in bulk GaN — •Jan Heye Buß, Jörg Rudolph, and Daniel Hägele — AG Spektroskopie der kondensierten Materie, Ruhr Universität Bochum, Germany
The wide-gap semiconductor GaN has attracted growing interest during the last years. Besides its potential for short-wavelength opto-electronics, the spin related properties make GaN a promising material for spintronics.1 Above room-temperature ferromagnetism is predicted for rare-earth or transition-metal doping,2 and due to the weak spin-orbit coupling long spin relaxation times are expected. We investigate the electron spin dynamics in n-type c-oriented wurtzite GaN epilayers by time-resolved Kerr-rotation measurements at T= 80 K. The electron spin lifetime shows a sudden increase if an external magnetic field is applied in the sample plane. This enhancement is explained by anisotropic Dyakonov-Perel spin relaxation in bulk GaN as a direct consequence of the special anisotropy of spin-orbit coupling in semiconductors with wurtzite structure.3
[1] I. Zutic et al., Rev, Mod. Phys. 76, 323 (2004)
[2] T. Dietl et al., Science 287, 1019 (2000)
[3] J. H. Buss et al., Appl. Phys. Lett. 95, 192107 (2009)