Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 19: Spin-controlled Transport I
HL 19.2: Talk
Tuesday, March 23, 2010, 09:45–10:00, H14
Time-resolved studies of current-induced spin polarization in strained InGaAs/GaAs structures — •Markus Hagedorn1,2,3, Sebastian Kuhlen1,3, Marten Patt1,3, Paul Schlammes1,3, Frederik Klein1,3, Stefan Göbbels1,3, Gernot Güntherodt1,3, Mihail Lepsa2,3, Thomas Schäpers2,3, and Bernd Beschoten1,3 — 1II. Phys. Institut A, RWTH Aachen University — 2Institut für Bio- und Nanosysteme (IBN-1), Forschungszentrum Jülich — 3JARA - Fundamentals of Future Information Technology
Understanding the mechanisms of electron spin interactions and dephasing in nonmagnetic semiconductor heterostructures are crucial for building novel spintronic devices. Conventional all-optical pump/probe methods for the creation and detection of coherent spins are nowadays supplemented by means of electrical techniques.
The underlying mechanisms which enable the so-called current induced spin polarization (CISP) are internal effective magnetic fields evoked by the broken inversion symmetry of the zinc blende structure in III-V semiconductor materials (Dresselhaus term) and, additionally, by strain in, e.g., InGaAs/GaAs heterostructures.
Applying ultrafast current pulses (time-resolved CISP) to lateral transport devices without ferromagnetic contacts, we are able to create and manipulate phase coherent spin ensembles, which are probed by Faraday rotation.
Work supported by DFG through FOR912.