Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 19: Spin-controlled Transport I
HL 19.9: Talk
Tuesday, March 23, 2010, 11:45–12:00, H14
Spin Hall drag in electronic bilayers — •Samvel M. Badalyan1,2 and Giovanni Vignale3 — 1Department of Physics, University of Regensburg, 93040 Regensburg, Germany — 2Department of Radiophysics, Yerevan State University, 1 A. Manoukian Street, Yerevan, 375025 Armenia — 3Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, USA
In electronic bilayers an electric current, driven in one of the layers, induces via inter-layer Coulomb scattering a charge accumulation in the other layer. This phenomenon known as Coulomb drag is of fundamental interest as a probe of electron correlations. Another effect of great interest is the Spin Hall Effect, i.e. the generation of spin accumulation by an electric current. This is due to spin-orbit interactions and has recently received great attention for its usefulness as a source of spin-polarized currents. Here we predict a new effect in electronic bilayers: spin Hall drag. The effect consists of the generation of spin accumulation across one layer by an electric current along the other layer. It arises from the combined action of spin-orbit and Coulomb interactions. Our theoretical analysis identifies two main contributions to the spin Hall drag resistivity: the side-jump contribution, going as T2, and the skew-scattering contribution, as T3. The induced spin accumulation, while generally quite small, should be observable in optical rotation experiments.
Work is supported by EU Grant PIIF-GA-2009-235394, SFB Grant 689, and NSF Grant No. DMR-0705460.