Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 2: Devices I

HL 2.1: Talk

Monday, March 22, 2010, 10:15–10:30, H13

Improvement of TFET perfomance by spacer technology — •Marc Dressler, Helmut Lochner, Carolin Axt, Ronny Schindler, Josef Biba, Oliver Hammer, Florian Palitschka, Dorota Kulaga-Egger, Rudolf Nüssl, Tanja Stimpel-Lindner, Torsten Sulima, and Walter Hansch — Universität der Bundeswehr München, Institut für Physik, Werner-Heisenberg-Weg 39, 85577 Neubiberg

Due to the International Technology Roadmap for Semiconductors (ITRS) the successive downscaling leads to various problems. Some of these problems are caused by limited prospects of photo lithography. Despite resolution enhancement technics like phase shift marks or optical proximity correction the ability to create self-adjusting structures below the resolution limit forces increasing attention. In this work lateral Tunnel-FETs were fabricated. The usage of TFETs are also suitable for short channel devices, because its functionality is based on the well known quantum-mechanical effect of band to band tunneling. To solve the problems of small structures some capable technical tricks are used, e.g. the spacer-technology. Due to these spacer most critical structures (e.g. gate) are self-aligned. A protective function for sensitive gate dielectrics is an additional achievement. To challenge the high demands for the following doping via diffusion a nitride-spacer with specific parameters was developed. The differences between this TFET and common lateral devices without spacer are shown by electrical characterization. The results will be confirmed by characterization abilities like SIMS and REM.