Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 2: Devices I

HL 2.4: Vortrag

Montag, 22. März 2010, 11:00–11:15, H13

Properties of an interface layer created by Boron-SOD diffusion — •Ronny Schindler, Josef Biba, Marc Dreßler, Carolin Axt, Helmut Lochner, Dorota Kułaga-Egger, Tanja Stimpel-Lindner, Florian Palitschka, Oliver Hammer, Torsten Sulima, and Walter Hansch — Universität der Bundeswehr München, Institut für Physik, Werner-Heisenberg-Weg 39, 85577 Neubiberg

The common manner of doping silicon in industry is ion implantation. Besides the high costs this doping method has problems to create shallow surface doping layers as they will be needed for future device generations. We investigate an alternative doping by using Spin-On-Dopants (SOD), where a dopant consisting liquid oxide is deposited on the silicon surface. After solidification the dopant atoms (boron, phosphorous) are driven from the oxide into the silicon by high-temperature diffusion process. As previous experiments have shown, phosphorus performs well, but if boron is used, an etch-resistant layer is left after the process on the surface. The nature and properties of this layer have not been investigated for a full understanding, but it creates problems in device fabrication. For clarification of this problem we fabricated MOS-diodes by using SOD. We tried to find out, if and how this layer can be removed, by using dry etching and wet etching methods. Finally we characterized the different diodes electrically, with and without this layer, to compare which removal technique is the most effective and how strong the influence of this layer is.