Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 20: Organic Semiconductors: Transistors and OLEDs
HL 20.1: Vortrag
Dienstag, 23. März 2010, 09:30–09:45, H15
Ionic liquid gated polymer transistor — •Johannes Schöck, Daniel Secker, and Heiko B. Weber — Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, Staudtstr. 7/A3, D-91058 Erlangen, Germany
We fabricate field-effect transistors with a polymer semiconductor using an ionic liquid top-gate, replacing the gate insulator. The geometry is bottom contact, liquid top gate. Electrical characterization yields a low conductance threshold of the device (∼ −2.5 V), and a steep increase of the source-drain current. An analysis points towards unusually high charge carrier mobility of the semi-conducting channel, with very favorable leakage currents through the gate. Strong hysteretic effects are observed.
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