Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 20: Organic Semiconductors: Transistors and OLEDs
HL 20.9: Vortrag
Dienstag, 23. März 2010, 11:45–12:00, H15
Comparative transport studies in Bridgman and sublimation grown 9,10-Diphenylanthracene single crystals. — •Andreas Steindamm1, Ashutosh K. Tripathi2, Rainer Stöhr3, Jörg Wrachtrup3, and Jens Pflaum1 — 1Institute of Experimental Physics VI, Julius-Maximilians-University, 97074 Würzburg, Germany — 2Holst Centre/TNO, 5656 AE Eindhoven, NL — 3Physikalisches Institut, University of Stuttgart, 70550 Stuttgart, Germany
To improve organic electronic applications, knowledge about microscopic mechanisms determining the charge carrier mobilities is pivotal. 9,10-Diphenylanthracene (DPA) has been identified as model system to study those correlations due to its high electron and hole mobilities at room temperature [1] and its complex structural phase behaviour. We will demonstrate our temperature dependent Time-Of-Flight data on single crystals grown by vapor phase transport (VPT) and by Bridgman growth technique. Both preparation techniques revealed crystals of different morphologies resulting in significant variations of the related bipolar mobilities. As a key result, the charge carrier mobility of ∼1cm2/Vs at room temperature along the (111)-direction of Bridgman crystals exceeds that along the (001)-direction of VPT grown crystals by about one order of magnitude. The observed differences in the mobility data will be discussed in the context of the microscopic molecular arrangement within the respective crystal structure. Financial support by BMBF (project GREKOS) is acknowledged.
[1] Tripathi A. K. et al., Adv. Mater. 19 (2007) 2097
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