HL 21: Quantum Dots and Wires, Optical Properties I: Nitrides
Tuesday, March 23, 2010, 09:30–11:15, H17
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09:30 |
HL 21.1 |
Theory for Optical Properties of Nitride-based Quantum Dot Systems — •Kolja Schuh, Michael Lorke, Jan Seebeck, Stefan Schulz, Paul Gartner, Gerd Czycholl, and Frank Jahnke
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09:45 |
HL 21.2 |
Polarization-induced charge carrier separation in GaN quantum dots on polar and nonpolar surfaces — •Oliver Marquardt, Tilmann Hickel, and Jörg Neugebauer
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10:00 |
HL 21.3 |
Microphotoluminescence Investigations of Single Group-III-Nitride Quantum Dots — •Stefan Werner, Christian Kindel, Thomas Switaiski, and Axel Hoffmann
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10:15 |
HL 21.4 |
Electroluminescence from an isolated single InGaN QD up to 150 K in the green spectral region — •Joachim Kalden, Christian Tessarek, Kathrin Sebald, Stephan Figge, Carsten Kruse, Detlef Hommel, and Jürgen Gutowski
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10:30 |
HL 21.5 |
Electronic and optical properties of nitride semiconductor quantum dots with wurtzite structure — •Stefan Barthel, Daniel Mourad, and Gerd Czycholl
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10:45 |
HL 21.6 |
Complete Study of Excitonic Fine-Structure Splitting in GaN/AlN Quantum Dots — •Gerald Hönig, Momme Winkelnkemper, Andrei Schliwa, Axel Hoffmann, Dieter Bimberg, Christian Kindel, Satoshi Kako, Takeshi Kawano, Hiroaki Oishi, and Yasuhiko Arakawa
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11:00 |
HL 21.7 |
Optical properties of GaN/AlGaN heterostructures embedded in GaN nanowires — Florian Furtmayr, •Jörg Teubert, Pascal Becker, Martin Stutzmann, and Martin Eickhoff
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