Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 27: GaN Preparation and Characterization
HL 27.9: Vortrag
Dienstag, 23. März 2010, 16:00–16:15, H15
Effect of Mg codoping on Europium(Eu+3) implanted GaN — •Jayanta Kumar Mishra1, Torsten Langer1, Uwe Rossow1, Kirill Trunov2, Rüdiger Schott2, Andreas Wieck2, and Andreas Hangleiter1 — 1Institut für Angewandte Physik, TU Braunschweig — 2Angewandte Festkörperphysik,Ruhr-Universität Bochum, Germany
Rare earth ions implanted into GaN are promising for optoelectronic applications. They show luminescence in the visible range while the luminescence from this material system is sharper as well as independent of temperature due to intra 4f transition of rare earth ions. To improve the emission efficiency we implanted Europium in GaN codoped with Mg at dose range from 109cm−2 to 1014cm−2 with an energy of 100keV. The red emission from 5D0→7F2 of europium was remarkably enhanced by Mg codoping. At low temperature this line was split into some additional lines due to the host crystal field effect. We observed higher intensity for lower Mg doped GaN but simultaneously relatively broader lines than that of higher Mg doped GaN. We derived the activation energy for both cases and found that it is increased from 4.4meV for high Mg concentation to 8.18meV for low Mg concentration in GaN.