HL 2: Devices I
Monday, March 22, 2010, 10:15–11:15, H13
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10:15 |
HL 2.1 |
Improvement of TFET perfomance by spacer technology — •Marc Dressler, Helmut Lochner, Carolin Axt, Ronny Schindler, Josef Biba, Oliver Hammer, Florian Palitschka, Dorota Kulaga-Egger, Rudolf Nüssl, Tanja Stimpel-Lindner, Torsten Sulima, and Walter Hansch
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10:30 |
HL 2.2 |
Advanced device performance of TFETs by embedded silicon germanium alloys — •Helmut Lochner, Peter Iskra, Martin Schlosser, Dorota Kulaga-Egger, Torsten Sulima, and Walter Hansch
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10:45 |
HL 2.3 |
SOD as self-acting passivation for lateral TFETs — •Carolin Axt, Helmut Lochner, Marc Dressler, Ronny Schindler, Josef Biba, Rudolf Nüssl, Torsten Sulima, and Walter Hansch
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11:00 |
HL 2.4 |
Properties of an interface layer created by Boron-SOD diffusion — •Ronny Schindler, Josef Biba, Marc Dreßler, Carolin Axt, Helmut Lochner, Dorota Kułaga-Egger, Tanja Stimpel-Lindner, Florian Palitschka, Oliver Hammer, Torsten Sulima, and Walter Hansch
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