Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 31: Poster I: Devices, Quantum Dots and Quantum Wires
HL 31.15: Poster
Tuesday, March 23, 2010, 18:30–20:30, Poster D1
Combining shallow etched quantum wires and sub-micron top gates for acoustoelectric quantum devices — •Marcin Malecha1, Hubert J. Krenner1, Jens Ebbecke2,3, and Achim Wixforth1,3 — 1Institut für Physik, Universität Augsburg, 86135 Augsburg — 2Mads Clausen Institute, University of Southern Denmark, Alsion 2, DK-6400, Sonderborg — 3Center for NanoScience (CeNS), Geschwister-Scholl-Platz 1, 80539 München
Nanostructures, such as quantum wires (QWRs) or quantum dots (QDs), are considered to be the future of the electronics and therefore widely under investigation. Basically the operation of such devices bases upon the controlling of electric potentials on mesoscopic lengthscales within the devices and the leads. We are investigating new sample designs on AlGaAs/GaAs heterostructures where two fabrication processes - shallow etched QWRs and sub-micron sized evaporated topgates - are combined. From this approach we expect a robust QWR definition by the etched structure and precision tuning of the potential landscape along the QWR by the topgates. The goal is a highly controllable system where we are able to transport single electrons e.g. via QD levels using surface acoustic waves. Here electrons are transported in potential valleys, which move along with the wave. We present first characterization experiments of devices combining both fabrication steps.