Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 31: Poster I: Devices, Quantum Dots and Quantum Wires
HL 31.19: Poster
Dienstag, 23. März 2010, 18:30–20:30, Poster D1
Individual GaAs nanorods imaged by coherent X-ray diffraction — Ullrich Pietsch1, •Andreas Biermanns1, Anton Davydok1, Hendrik Paetzelt2,4, Ana Diaz3, Volker Gottschalch2, and Hartmut Metzger3 — 1Universität Siegen, Germany — 2Universität Leipzig, Germany — 3ID01 beamline, ESRF, France — 4IOM Leipzig, Germany
Semiconductor nanorods are of particular interest for new semiconductor devices because the nanorod approach can be used to form heterostructures of materials with a large lattice mismatch and to define nanorod arrays with tailored inter-rod distance. However, all applications require objects with uniform physical properties based on uniform morphology. Complementary to electron microscopy techniques, destruction free X-ray diffraction techniques can be used to determine structural and morphological details. Using scanning x-ray diffraction microscopy with a spot size of 220x600 nm2 we were able to inspect individual GaAs nanorods grown by seed-free MOVPE through circular openings in a SiNx mask in a periodic array with 3 µm spacing on GaAs[111]B. The focussed x-ray beam allows the determination of the strain state of individual rods and in combination with coherent diffraction imaging, we were able to characterize also morphological details. Rods grown at different positions in the array show significant differences in shape, size and strain state.