Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 31: Poster I: Devices, Quantum Dots and Quantum Wires

HL 31.21: Poster

Dienstag, 23. März 2010, 18:30–20:30, Poster D1

Ion beam doped semiconductor nanowires for energy applications — •Steffen Milz¹, Vladimir Sivakov², Gerald Brönstrup², Martin Gnauck¹, Raphael Niepelt¹, Silke Christiansen², and Carsten Ronning¹ — ¹Institute of Solid State Physics, University of Jena, Germany — ²Institute of Photonic Technology, Albert Einstein Straße 9, D-07745 Jena, Germany

Semiconductor nanowires are attractive candidates for thermoelectric and photovoltaic devices due to an increased thermoelectric figure of merit (ZT-value) compared to bulk material and supreme light scattering and absorption performance. In both cases, p- as well as n-type doping is necessary, but doping of nanowires during growth is difficult and inaccurate. Ion implantation was used instead in order to overcome these limitations. However, ion implantation causes also damage, which can be removed by subsequent annealing procedures. In this presentation we report on simple thermoelectric devices based on etched Si nanowires, as well as on photovoltaic devices based on VLS grown Si and ZnO nanowires.