Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 31: Poster I: Devices, Quantum Dots and Quantum Wires

HL 31.22: Poster

Tuesday, March 23, 2010, 18:30–20:30, Poster D1

Ion Beam Induced Alignment of Semiconductor Nanowires — Christian Borschel¹, •Susann Spindler¹, Raphael Niepelt¹, Sebastian Geburt¹, Christoph Gutsche², Ingo Regolin², Werner Prost², Franz-Josef Tegude², Daniel Stichtenoth³, Daniel Schwen⁴, and Carsten Ronning¹ — ¹Institute for Solid State Physics, University of Jena, Max-Wien-Platz 1, 07743 Jena, Germany — ²Institute for Semiconductor Technology, University of Duisburg-Essen, Lotharstraße 55, 47057-Duisburg, Germany — ³II. Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany — ⁴Department of Materials Science and Engineering, University of Illinois, 1304 W. Green St., Urbana, IL 61801, USA

Epitaxially grown GaAs nanowires were irradiated with different kinds of energetic ions. The growth substrates were <100> GaAs, and the nanowires grow under an angle of 35^∘. A bending of the nanowires was observed under ion beam irradiation, where the direction and magnitude of the bending depends on the energy, the species, and fluence of the incident ions. By choosing suitable ion beam parameters the nanowires could be realigned towards the ion beam direction. In order to understand the underlying mechanisms, computer simulations of the ion irradiation were done using a special version of TRIM which accounts for the geometry of the nanowires. The simulated distributions indicate vacancy and interstitial formation within the implantation cascade as the key mechanism for bending.