Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 31: Poster I: Devices, Quantum Dots and Quantum Wires
HL 31.32: Poster
Tuesday, March 23, 2010, 18:30–20:30, Poster D1
Nanoscale ferromagnetic gates on shallow etched quantum wires — •Lakshmy Ravindran1, Rasmus Ballmer1, Saskia F. fischer1, Ulrich Kunze1, Dirk Reuter2, and Andreas Wieck2 — 1Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum, Germany — 2Angewandte Festkörperphysik, Ruhr-universität Bochum, D-44780 Bochum, Germany
The effect of magnetic fringing fields on electron transport is a focus of worldwide research because of the promising aspect of utilizing the electron spin for logic operations in spin- and magnetoelectronics (spintronics). Recently, large magnetoresistance phenomena have been reported for nanoscale ferromagnetic gates placed on ballistic quantum channels [1]. We are investigating such a ferromagnetic/semiconductor device with a Permalloy(Py) finger gate only 35nm apart from the GaAs/AlGaAs channel. We define the nanostructures using electron-beam lithography. Patterning of the quantum wire is done by shallow wet-etching. The Py finger gate is fabricated by thermal evaporation and lift-off processing. We have performed the two-terminal conductance measurements using a lock-in-amplifier at a low temperature of 4.2 K. We are investigating the sample with respect to applied gate voltages, cooling top gate bias and magnetic field.
[1] J.-U Bae et al. IEEE Trans, Magn, 44, 4707, (2008).