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HL: Fachverband Halbleiterphysik

HL 31: Poster I: Devices, Quantum Dots and Quantum Wires

HL 31.37: Poster

Dienstag, 23. März 2010, 18:30–20:30, Poster D1

Electrical Properties of CVD-grown in situ doped silicon nanowires using silane as a precursor — •Björn Hoffmann, Uwe Hübner, Gerald Brönstrup, Vladimir Sivakov, Florian Talkenberg, and Silke Christiansen — Institut für Photonische Technologien e.V., Abt. Halbleiter-Nanostrukturen, 07745 Jena

In order to use silicon nanowires (SiNWs) for photovoltaic or sensor devices, defined electrical properties are needed. We use electron beam lithography to prepare up to 20 ohmic contacts to one single wire. Thereby we are able to measure the resistivity along the wire in a 4-point-probe-measurement setup. By using a highly doped thermally oxidized Si-substrate as a back gate, we can produce single nanowire FETs.

Doping of SiNWs is performed in situ by adding diborane or phosphine into the CVD-chamber during growth.

Furthermore we use atomic layer deposition (ALD) of aluminium oxide to passivate the wire surface in order to reduce the surfaces recombination rate and thus enhance the carrier lifetime.