Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 31: Poster I: Devices, Quantum Dots and Quantum Wires

HL 31.45: Poster

Dienstag, 23. März 2010, 18:30–20:30, Poster D1

Optical properties of transition metal doped ZnO nanowires — •Sebastian Geburt, Christian Borschel, and Carsten Ronning — Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena

Semiconductor nanowires (NWs) offer ideal properties as building elements for next generation optoelectronic devices as e.g. waveguides, LEDs or nanoscaled lasers. Optically pumped ZnO nanowire lasers have already been realized; nevertheless, the lasing threshold of 300 kW/cm² is too high for realistic device integration. A solution to lower the threshold could be the change from the quasi-2-niveau system of undoped ZnO to a 4-niveau system of ZnO with optically active impurities like transitions metals (Fe and Co). To cope with the unsolved problem of doping during VLS growth, ZnO nanowires were ion implanted with Fe and Co (0.05 to 8 at%). The ion induced lattice damage was reduced by annealing in different atmospheres. The structural properties were investigated by SEM, TEM and EDX. The optical properties are studied by spatial resolved CL as a function of annealing environment, impurity concentration, temperature and excitation power. The luminescence of single NWs gives insights to the correlation between morphology and light emitting properties.