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HL: Fachverband Halbleiterphysik
HL 31: Poster I: Devices, Quantum Dots and Quantum Wires
HL 31.4: Poster
Dienstag, 23. März 2010, 18:30–20:30, Poster D1
Design and Characterisation of InGaN-based vertical external cavity surface emitting lasers — •Ralph Debusmann1, Nacef Dhidah2, Veit Hoffmann3, Leonhard Weixelbaum3, Uwe Brauch2, Markus Weyers3, Michael Kneissl1, and Patrick Vogt1 — 1Institut für Festkörperphysik, TU-Berlin, EW 6-1, Hardenbergstr. 36, 10623 Berlin — 2Institut für Strahlwerkzeuge, Universität Stuttgart, 70569 Stuttgart — 3Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4; 12489 Berlin
Optically pumped semiconductor disk lasers (SCDL) with external resonator allow the scaling of laser sources to higher output power levels with diffraction limited beam quality. This idea has already been successfully demonstrated in the infrared spectral region with SCDL based on the material system InGaAs. Here we present a SCDL emitting in the blue-violet wavelength region that is based on the material system InGaN. We have investigated different designs of the InGaN quantum well active region, in particular the application of a resonant periodic gain (RPG) structure and the influence of the cavity length onto the device parameters.
We will discuss implications for the design of the active region besides the presentation of basic device parameters i.e. output-power vs. pump-power, slope efficiency and the far- and near-field pattern.
Pumped by a pulsed nitrogen laser at 337 nm emission wavelength and pulse width of 3 ns the SCDL emits at a wavelength of 394 nm with a threshold power density of 700 kW/cm2 and a peak output power of 300 W. The conversion efficiency is 3.5