Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 31: Poster I: Devices, Quantum Dots and Quantum Wires
HL 31.8: Poster
Tuesday, March 23, 2010, 18:30–20:30, Poster D1
Characterization of interface traps in stable and efficient Tb-implanted SiO2 light-emitting devices — •Michael Seeger, Lars Rebohle, Jan Lehmann, Wolfgang Skorupa, Manfred Helm, and Heidemarie Schmidt — Forschungszentrum Dresden-Rossendorf e. V., Bautzener Landstr. 400, 01328 Dresden
The strong green electroluminescence from the Tb3+ ions in SiO2 is excited by hot electrons from the conduction band of the SiO2 matrix in metal oxide semiconductor light emitting devices (MOSLED)[1]. Charge trapping in the oxide layers and at the oxide layer-semiconductor interface cause a short lifetime of the MOSLED.
This has been investigated by means of frequency dependent admittance-voltage measurements to determine if the MOSLED will perform satisfactorily for different annealing times. Our results on unimplanted MOSLEDs reveal the largest interface trap density of 1013 eV−1cm−2 for 60 s rapid thermal annealing at 1000∘C. Also the effect of Tb+ implantation on interface trap properties in MOSLEDs containing double-stacked dielectric layers has been investigated. Quasistatic charge-voltage (QV) measurements have been used to probe the interface trap occupancy versus voltage.
[1] J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, T. Gebel, Bright green electroluminescence from Tb3+ in silicon MOS devices, J. Appl. Phys. 97, 123513 (2005).