Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 32: Poster I: Group II - Oxides
HL 32.10: Poster
Tuesday, March 23, 2010, 18:30–20:30, Poster D1
Space-charge regions in ZnO-based metal-semiconductor field-effect transistors and metal-semiconductor-metal photodetectors — •Zhipeng Zhang, Michael Lorenz, Lucie Behnke, Christian Czekalla, Heiko Frenzel, Gisela Biehne, Holger Hochmuth, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstraße 5, 04103, Leipzig
We present current-voltage and light beam induced current (LBIC) investigations of metal-semiconductor field-effect transistors (MESFETs) and interdigital metal-semiconductor-metal photodetectors (MSM-PDs). The Schottky-contacts were fabricated by reactive DC-sputtering of palladium (Pd) with a Pd-capping [1] on nominally undoped ZnO thin films, heteroepitaxially grown by pulsed-laser deposition on sapphire and quartz glass [2]. They exhibit ideality factors <1.5 and effective barrier heights >0.8 V. The normally-on PdOx-gate MESFETs have an on/off-ratio of 103 and channel mobilities of 0.3 cm2/Vs. The LBIC measurements enable us to probe the lateral extension of the space-charge regions and homogeneity of the carrier distribution in the samples.
[1]: A. Lajn et. al., J. Vac. Sci. Technol. B, 27, 1769 (2009)
[2]: H. Frenzel et. al., Appl. Phys. Lett., 95, 153503 (2009)