Regensburg 2010 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 32: Poster I: Group II - Oxides

HL 32.11: Poster

Dienstag, 23. März 2010, 18:30–20:30, Poster D1

Growth and doping of ZnO nanorods — •Cornelius Thiele, Janos Sartor, Felix Eilers, Jonas Conradt, Claus Klingshirn, and Heinz Kalt — Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany

The growth of ZnO nanorods has attracted a large interest in recent years, due to the abundance of the material and the relative ease of manufacturing such structures. The controllable doping of these structures is in the focus of our work, because almost all applications would benefit from a controllable conductivity. In our case the particular interest is to increase the electron transport in P3HT:PCBM hybrid solar cells by integrating ZnO nanorods. We grow nanorods on different substrates in a vapor phase transport process under high (950°C) and low (500°C) temperatures and investigate different methods of dopant integration. We examine in-situ doping during growth as well as evaporation and in-diffusion of donator materials afterwards. The effects of annealing time, temperature and atmosphere on the donor diffusion are studied by low-temperature photoluminescence measurements.