Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 32: Poster I: Group II - Oxides

HL 32.12: Poster

Tuesday, March 23, 2010, 18:30–20:30, Poster D1

ZnO-based Nanowire Structures and Heterostructures — •Martin Lange, Christof Peter Dietrich, Christian Czekalla, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Linnéstr. 5, D-04103 Leipzig, Germany

Nanowires are ideal building blocks for future optoelectronic applications. For the fabrication of devices based on heterostructures, bandgap engineering is required, alloying ZnO e.g. with Mg and Cd. The alloys of ZnO with Mg results in a larger bandgap whereas it is reduced for Cd. The growth of alloy nanostructures is often much more challenging than the growth of the alloy thin films as the freedom in the choice of the growth parameters is reduced.

We report on the growth and optical properties of ZnO-based nanowire structures and heterostructures grown by pulsed laser deposition. A ZnO layer on a-sapphire was used as substrate to grow the nanowires in the regime of low density, allowing a more controlled growth mode and easier access to single nanowires than for high densities. For the implementation of quantum wells into the heterostructures, a core with a large bandgap is reasonable. In this context, MgZnO-nanowires were investigated. For the quantum well itself ZnCdO is a promising material. Therefore (Mg)ZnO nanowires were coated with a ZnCdO shell and an outer (Mg)ZnO shell forming a nanowire core-shell-structure.