Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 32: Poster I: Group II - Oxides

HL 32.13: Poster

Dienstag, 23. März 2010, 18:30–20:30, Poster D1

Growth and characterization of ZnO- and ZnO:P-microwires — •Christof P. Dietrich, Martin Lange, Jan Zippel, Jörg Lenzner, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig

Currently, there is an extreme interest in fabricating small sized ultraviolet emitting devices such as LEDs or lasers. The wurtzite semiconductor ZnO is a promising candidate for such applications due to its band gap at 3.4 eV and its large exciton binding energy allowing the observation of excitonic recombination at room temperature and above.

ZnO is a native n-type semiconductor. Stable p-type conductivity can be achieved by the incorporation of phosphorus atoms into ZnO [1]. Micrometer sized ZnO- and ZnO:P-rods were grown by a thermal reduction process using carbon as reductant.

We give detailed insight into the growth process of ZnO-based microstructures and their morphology. Furthermore, we present a comprehensive study of the optical and electrical properties of ZnO- and ZnO:P-microwires using cathodoluminescence spectroscopy and Hall effect measurements, respectively.

[1] B.Q. Cao et al., phys. stat. sol. (RRL) 2, 37-39 (2008).