Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 32: Poster I: Group II - Oxides
HL 32.15: Poster
Dienstag, 23. März 2010, 18:30–20:30, Poster D1
Sputter deposited gallium doped ZnO for TCO applications — •Marc Dietrich1, Achim Kronenberger1, Angelika Polity1, Bruno Meyer1, Jürgen Bläsing2, and Alois Krost2 — 1I. Physikalisches Institut, Justus Liebig Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany — 2FNW/IEP/AHE, Otto-von-Guericke Universität Magdeburg, Postfach 4120, 39016 Magdeburg, Germany
Transparent conducting oxides to be used for flat panel or display applications should exhibit low electrical resistivity in line with a high optical transmission in the visible spectral range. Today indium-tin-oxide is the material which meets these requirements best. However, the limited availability of indium makes it useful to search for alternatives and ZnO doped with group III elements are promising candidates. While the Al doping in high concentrations causes problems due to the formation of insulating Al-oxides, Gallium related oxides are typically n-type conducting wide band gap semiconductors. Therefore we deposited Gallium doped ZnO thin films on quartz and sapphire substrates by radio frequency magnetron sputtering with a ZnO/Ga2O3(3at%) composite target. The substrate temperature and the oxygen flow during the sputtering process were varied to optimise the layer properties. Introducing oxygen to the sputtering gas allowed to vary the resistivity of the films by three orders of magnitude from about 1 Ωcm down to less than 1 mΩcm.