Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 32: Poster I: Group II - Oxides
HL 32.16: Poster
Tuesday, March 23, 2010, 18:30–20:30, Poster D1
Properties of hydrogen doped ZnO films prepared by RF magnetron sputtering — •Achim Kronenberger, Marc Kostantin Dietrich, Steve Petznick, Daniel Horn, Andreas Laufer, Jan Eric Stehr, Angelika Polity, Detlev Michael Hofmann, and Bruno Karl Meyer — I. Physics Institute, Justus-Liebig-University, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
It is well known that hydrogen incorporated into ZnO induces shallow donor levels while in most other semiconductors hydrogen counteracts the prevailing conductivity by being incorporated as H+ (a donor) in p-type and as H- (an acceptor) in n-type material. Therefore, besides the Group III elements Al, Ga and In, hydrogen is suitable to control n-type conductivity in ZnO.
In our work hydrogen doped ZnO thin films were prepared by reactive radio frequency magnetron sputtering using a ceramic ZnO target. In the deposition process argon was used as sputtering gas and hydrogen and oxygen as reactive gases.
The structural (XRD), electrical (Hall-effect) and optical (Transmission) film properties were analyzed. Secondary ion mass spectrometry (SIMS) was used to quantify the hydrogen incorporation and electron spin resonance (ESR) measurements were used to detect the nature of the shallow donor. The thermal stability of hydrogen in the ZnO layers was examined by annealing experiments. Also long-term stability was investigated.
By varying the deposition parameters we were able to adjust the carrier concentrations from 1013 cm−3 up to the 1020.