Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 32: Poster I: Group II - Oxides

HL 32.18: Poster

Tuesday, March 23, 2010, 18:30–20:30, Poster D1

Nitrogen Doping of Homoepitaxial a-plane ZnO — •Sebastian Eisermann, Stefan Lautenschlaeger, Michael Hofmann, Melanie Pinnisch, Andreas Laufer, Peter Jens Klar, and Bruno Karl Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen

Reproducible p-type doping of ZnO by nitrogen remains a challenge and evidence is found that the nitrogen incorporation depends on the growth plane during epitaxial growth. Thus we investigated the growth of nitrogen doped non-polar ZnO on a-plane ZnO-single-crystals using a metallic precursor CVD process. The nitrogen incorporation into the thin films has been analyzed by secondary ion mass spectrometry (SIMS) and the N-related vibrational modes were observed in Raman spectroscopy. Optical features of the layers such as the donor- and acceptor-bound-excitons have been investigated using low temperature photoluminescence (PL) measurements. The nitrogen incorporation in the non-polar films is possible while the incorporation of other impurities, especially group III impurities, seems to be diminished. This leads to a lower residual n-type conductivity.