Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 32: Poster I: Group II - Oxides

HL 32.19: Poster

Dienstag, 23. März 2010, 18:30–20:30, Poster D1

Nitrogen incorporation in ZnO thin films grown by chemical vapour deposition (CVD) — •Michael N. Hofmann, Stefan Lautenschlaeger, Sebastian Eisermann, Udo Roemer, Melanie Pinnisch, Andreas Laufer, Swen Graubner, Peter J. Klar, and Bruno K. Meyer — 1. Physics Institute, Justus-Liebig-University, Heinrich Buff Ring 16, 35392 Giessen, Germany

We determined the effect of different growth temperatures on the amount of nitrogen incorporation in thin ZnO films grown by chemical vapour deposition in a vertical growth configuration. Ammonia was chosen as nitrogen percurser, while ZnO a-plane and c-plane bulk crystals served as substrates. The grown films were investigated by Raman spectroscopy, photoluminescence and secondary ion mass spectroscopy. It turned out that low growth temperatures promote the incorporation of nitrogen. In contrast high growth temperatures are indispensable for achieving good crystal quality. We will show how to combine high nitrogen amounts with high crystal quality by in situ modulation of growth temperature and ammonia flux. Furthermore we investigated the influence of an additional annealing step on the samples.