Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 32: Poster I: Group II - Oxides
HL 32.8: Poster
Dienstag, 23. März 2010, 18:30–20:30, Poster D1
Transport properties of ZnO along a- and c-crystallographic directions — •Christian H. Will, Matthias T. Elm, Sebastian Eisermann, Stefan Lautenschläger, Bruno K. Meyer, and Peter J. Klar — 1. Physikalisches Institut, Justus-Liebig-University, Heinrich-Buff-Ring 16, 35392 Giessen
ZnO layers were grown on r-plane and c-plane sapphire substrates by chemical vapor deposition (CVD) resulting in c- and a-plane orientated ZnO layers, respectively. In order to investigate the transport properties along the different crystal directions, the samples were Hall-bar-structured by photolithography, followed by a wet chemical etching step in a solution of water (H2O), phosphoric acid (H3PO4) and acetic acid (C2H4O2) in parts of 30:1:1 by volume. On the a-plane ZnO, the Hall-bars were orientated such that the current could be applied either parallel to the a- or parallel to the c-direction of the crystal. For c-plane ZnO, the current direction is along the crystallographic a-direction. Magneto-transport measurements were performed in the temperature range from 1.6 to 280 K in external magnetic fields up to 10 T in order to determine the magnetoresistance, the Hall constant and the mobility as functions of temperature. The resulting transport properties for the different Hall-bar orientations will be compared and analyzed.