Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 32: Poster I: Group II - Oxides

HL 32.9: Poster

Tuesday, March 23, 2010, 18:30–20:30, Poster D1

Investigations on the stability of zinc oxide based metal-semiconductor field-effect transistors — •Michael Lorenz, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern, Holger Hochmuth, and Marius Grundmann — Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig

Metal-semiconductor field-effect transistors (MESFETs) were fabricated by reactive dc-sputtering of Ag, Pd and Pt as Schottky-gate contact on ZnO thin films grown by pulsed-laser deposition and by rf magnetron sputtering on glass substrates. With on/off-current ratios of up to 10⁶ and channel mobilities at around 1 cm²/Vs [1] the devices are a potential alternative to currently used a-Si based switching thin film transistors (TFTs) in display applications. For a reasonable operation the MESFETs have to be resistent against light illumination, raised temperatures and require a long lifetime under bias stress without the degradation of their field-effect properties. We present studies of the influence of light with different wavelenghts as well as effects of temperatures in the range of 25 ^∘C and 150 ^∘C on the electrical properties of the MESFETs. Beside the influence of time the bias stress stability and different gate geometries on the field-effect charactersitics of the TFTs are shown.

[1] H. Frenzel et al., Appl. Phys. Lett. 95, 153503 (2009)