Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 33: Poster I: Transport, including Magnetic-Field Effects
HL 33.15: Poster
Tuesday, March 23, 2010, 18:30–20:30, Poster D1
Electron spin relaxation in bulk GaN: Temperature and magnetic field dependence — Jan Heye Buß, Jörg Rudolph, •Henning Hillebrand, and Daniel Hägele — AG Spektroskopie der kondensierten Materie, Ruhr-Universität Bochum, Germany
Spin-orbit coupling (SOC) is the main reason for spin relaxation in most semiconductors (SC). A thorough understanding of SOC is therefore essential, e.g. for the realization of spintronic devices requiring long spin relaxation times. In contrast to the extensive research on SOC in SCs with zinc-blende structure, the effect of SOC on the electron spin dynamics in GaN with wurtzite structure was only rarely studied. We present measurements of the temperature (T = 80 - 300K) and magnetic field (B = 0 - 1T) dependence of the electron spin relaxation time in bulk wurtzite GaN by time-resolved Kerr-rotation. The observed temperature dependence and an intrinsic anisotropy [1] of the spin relaxation are explained by the D’yakonov-Perel mechanism with a k-linear (Rashba-like) and k3-dependent (Dresselhaus-term) contribution to the conduction band splitting.
[1] J. H. Buss et al., Appl. Phys. Lett. 95, 192107 (2009)