Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 34: Poster I: III-V Semiconductors
HL 34.15: Poster
Tuesday, March 23, 2010, 18:30–20:30, Poster D2
generating InxGa1-xAs quantum dots with low areal density and tailored ground state emission — •ashish rai, dirk reuter, and andreas wieck — Lehrstuhl für Angewandte Festkörperphysik Ruhr-Universität Bochum, Universitätsstraße 150, Gebäude NB, D-44780, Bochum, Germany
In a new concept for an electrically pumped single photon source,quantum dots with low areal density (∼1×108/cm2) and a ground state emission wavelength below 1000nm at 4.2K are required.To achieve this low density, we use a gradient approach where on one side of the wafer the density is high and on other side no QDs are present at all.In the transition region, the desired QD density is present. The evolution of the QD density gradient is checked by photoluminescence spectroscopy. We will also present two growth protocols to obtain the desired emission wavelength.