Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 34: Poster I: III-V Semiconductors
HL 34.17: Poster
Tuesday, March 23, 2010, 18:30–20:30, Poster D2
Interaction of InN(0001)-(2×2) surfaces with water — •Anja Eisenhardt, Stephanie Reiss, Marcel Himmerlich, Juergen A. Schaefer, and Stefan Krischok — Institut für Physik and Institut für Mikro- und Nanotechnologien, TU Ilmenau, P.O. Box 100565, 98684 Ilmenau, Germany
The interaction of water with (2×2) reconstructed InN(0001) surfaces prepared by plasma assisted molecular beam epitaxy will be presented. Thin InN films were characterised in-situ by photoelectron spectroscopy (XPS, UPS) and exposed to water directly after growth. During molecular exposure changes in the core level as well as valence band spectra were measured. Upon H2O interaction different oxidation stages can be identified due to the formation of several O1s states. Furthermore, three different electron states appear in the valence band at 5.2 eV, 10.2 eV and 8.2 eV. The first two structures can be assigned to oxygen adsorbates based on the comparison to experiments upon InN interaction with O2, whereas the origin of the latter state is to be identified yet. Additionally the interaction with water molecules results in the disappearance of the (2×2) reconstruction as well as the related surface state at the Fermi level. In parallel the work function decreases and a change in the surface band bending is observed. The results of InN-water interaction will be compared to O2-induced changes of the InN(0001) surface properties.