Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 34: Poster I: III-V Semiconductors

HL 34.22: Poster

Tuesday, March 23, 2010, 18:30–20:30, Poster D2

Formation of Ga2O3 by the oxidation of p-type GaN thin films — •Melanie Pinnisch, Daniel Reppin, Jan Stehr, Andreas Laufer, Detlev M. Hofmann, and Bruno K. Meyer — 1. Physikalisches Institut, Justus-Liebig-University-Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen

Both GaN and Ga2O3 are wide band gap semiconductors with energies of 3.45 eV and 4.9 eV, respectively. While GaN can be achieved p- or n-type conducting by doping, Ga2O3 is n-type or high resistive dependent on the presence of oxygen vacancies. We studied the conversion of p-type Mg doped GaN thin films to Ga2O3 by thermal treatments in the temperature range from 600 °C to 1200 °C and in different atmospheres. Changes of the film properties were studied by means of X-ray diffraction, photo-electron spectroscopy and atomic force microscopy. Optical and magnetic resonance methods were used to investigate the evolution of the dopands and defects.