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HL: Fachverband Halbleiterphysik

HL 34: Poster I: III-V Semiconductors

HL 34.23: Poster

Dienstag, 23. März 2010, 18:30–20:30, Poster D2

Defect and intra-4f luminescence of rare earth doped group-III nitrides synthesized by high pressure high temperature method — Sven Müller¹, Takashi Taniguchi², •Ulrich Vetter¹, and Hans Hofsäss¹ — ¹Georg-August-Universität Göttingen, II. Physikalisches Institut, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany — ²National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan

Cubic boron nitride (c-BN) and AlN exhibit the largest band gaps among all group-III nitrides with 6.2 and 6.0 eV, respectively. Both materials posses the ability for optoelectonic building blocks which can operate at high temperatures, high power, high frequencies and under extreme chemical conditions. The intensive and narrow intra-4f luminescence of rare earth doped c-BN and AlN crystals could be employed for laser diodes or in optical communication technology. Rare earth doped c-BN and AlN crystals were synthesized via the high temperature high pressure method, with temperatures and pressures between 1450 - 1620 ^∘C and 4.5 - 6.3 GPa, respectively. Ba₃B₂N₄ and Li₃AlN₂ were used as solvents with addition of rare earth fluorides as source material for the synthesis of c-BN and AlN, respectively. The luminescence of rare earth doped c-BN and AlN is a superposition of different defect transitions of the host material and intra-4f transitions of the rare earth dopant ion. Intrinsic defects as well as impurity defect complexes serve as origin for various defect bands in c-BN and AlN.